TY - JOUR A2 - Xiao, Shuyuan AU - Liu, Yuebo AU - Liu, Honghui AU - Yang, Hang AU - Yao, Wanqing AU - Wang, Fengge AU - Ren, Yuan AU - Shen, Junyu AU - Zhang, Minjie AU - Wu, Zhisheng AU - Liu, Yang AU - Zhang, Baijun PY - 2021 DA - 2021/04/28 TI - Micropyramid Vertical Ultraviolet GaN/AlGaN Multiple Quantum Wells LEDs on Si(111) SP - 9990673 VL - 2021 AB - Micropyramid vertical GaN-based ultraviolet (UV) light-emitting diodes (LEDs) on Si(111) substrate have been fabricated by selective area growth to reduce threading dislocations and the polarization effects. There is no-light emission at the bottom and six planes of the pyramid at lower current due to the leakage current and nonradiative recombination of the dislocation at the bottom and the 90° threading dislocations (TDs) at six planes of the pyramid, and the top of the pyramid is the high-brightness region. The micropyramid UV LED has a high optical output intensity under a small current injection, and the series resistance of unit area is only a quarter of the conventional vertical LEDs, so the micropyramid UV LED would have a high output power under the drive circuit. The reverse leakage current of a single micropyramid UV LED is 2 nA at −10 V. SN - 1687-8108 UR - https://doi.org/10.1155/2021/9990673 DO - 10.1155/2021/9990673 JF - Advances in Condensed Matter Physics PB - Hindawi KW - ER -